Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Threshold voltage instabilities of present SiC-power MOSFETs under positive bias temperature stress

We study the threshold voltage (Vth) instability of commercially available silicon carbide (SiC) power MOSFETs or prototypes from four different manufacturers under positive bias temperature stress (PBTS). A positive bias near Vth causes a threshold voltage shift of 0.7 mV per decade in time per nanometer oxide thickness in the temperature range between -50°C and 150°C. Recovery at +5 V after a...

A Study of the Threshold Voltage Variations for Ultrathin Body Double Gate SOI MOSFETs

Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study...

Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria

Undoped-body MOSFETs are currently becoming increasingly important and the value of threshold voltage is often used to assess the reliability of fabricated devices. However there exists a disparity of threshold voltage criteria proposed for these novel devices. The concept of threshold voltage in undoped-body MOSFETs is examined and various existing criteria are analyzed and compared in an effo...

Effect of gate dielectric on threshold voltage of Nanoscale MOSFETS

An integrated circuit (IC) dimensions continue to decrease, RC delay, crosstalk noise, and power dissipation of the interconnect structure become limiting factors for ultra-large-scale integration of integrated circuits. Modern microcircuits may have eight metal layers, each separated by only 0.1 micrometers. RC delays and cross talk rather than transistor speed are now the major performance li...